AT49BV040B-TU

AT49BV040B-TU, 4-megabit Flash Memory, TSOP-32, 5.5V, 20mA, ATMEL Corporation

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Price:: US $1.50~1.80 / piece [Get Latest Price]

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PartNumber:: AT49BV040B-TU

Brand:: ATMEL Corporation - ATMEL | Pack: TSOP | D/C: 10+

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Products Upload time: 2012-07-18

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Product Summary

The AT49BV040B-TU is an in-system reprogrammable Flash Memory. Its 4 megabits of memory is organized as 524,288 words by 8 bits. The AT49BV040B-TU offers an access time of 70 ns (VCC = 2.7V to 3.6V)and an access time of 55 ns (VCC = 4.5V to 5.5V). The power dissipation over the industrial temperature range with VCC = 2.7V to 3.6V is 72mW and is 110 mW with VCC = 4.5V to 5.5V. When the device is deselected, the CMOS standby current is less than 30 μA. To allow for simple in-system reprogrammability, the AT49BV040B-TU does not require high input voltages for programming.

Parametrics

AT49BV040B-TU absolute maximum ratings: (1)Temperature Under Bias: -55℃ to +125℃; (2)Storage Temperature: -65℃ to +150℃; (3)All Input Voltages (including NC Pins) with Respect to Ground: -0.6V to +6.25V; (4)All Output Voltages with Respect to Ground: -0.6V to VCC + 0.6V; (5)Voltage on A9 with Respect to Ground: -0.6V to +10.0V.

Features

AT49BV040B-TU features: (1)Single Supply for Read and Write: 2.7V to 5.5V; (2)Fast Read Access Time: 70 ns (VCC = 2.7V to 3.6V); 55 ns (VCC = 4.5V to 5.5V); (3)Internal Program Control and Timer; (4)One 16K Bytes Boot Sector with Programming Lockout; (5)Two 8K Bytes Parameter Sectors; (6)Eight Main Memory Sectors (One 32K Bytes, Seven 64K Bytes); (7)Fast Erase Cycle Time: 8 Seconds; (8)Byte-by-Byte Programming: 10 μs/Byte Typical; (9)Hardware Data Protection; (10)DATA Polling or Toggle Bit for End of Program Detection; (11)Low Power Dissipation; (12)20 mA Active Current; (13)25 μA CMOS Standby Current for VCC = 2.7V to 3.6V; (14)30 μA CMOS Standby Current for VCC = 4.5V to 5.5V; (15)Minimum 100,000 Write Cycles.